MMBT2907A |
RFQ for MMBT2907A Required Field |
 |
| Technical/Catalog Information | MMBT2907A |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Current - Collector (Ic) (Max) | 600mA |
| Power - Max | 350mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Frequency - Transition | 200MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MMBT2907A MMBT2907A 497 2498 2 ND 49724982ND 497-2498-2 |
| Product | Manufacturers | Pack | D/C | |||||
| MMBT2907A | - | SOT-23 | 04+ |
This device is designed for use as a general purpose amplifierand switch requiring collector currents to 500 mA. Sourcedfrom Process 63.
|
Symbol |
Parameter |
Value |
Units |
|
VCEO |
Collector-Emitter Voltage |
60 |
V |
|
VCBO |
Collector-Base Voltage |
60 |
V |
|
VEBO |
Emitter-Base Vol tage |
5.0 |
V |
|
IC |
Collector Current - Continuous |
800 |
mA |
|
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES:
` These ratings are based on a maximum junction temperature of 150 degrees C.
` These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle perations.
` All voltages (V) and currents (A) are negative polarity for PNP transistors.
